CXMT Begins Mass Production of Next-Generation DRAM
Chinese memory-chip manufacturer ChangXin Memory Technologies (CXMT) has officially commenced mass production of its fifth-generation DRAM platform. The announcement was made at the 2026 World Manufacturing Convention on September 20, marking a significant milestone in China’s push to strengthen its domestic semiconductor capabilities and reduce reliance on foreign suppliers.
Key Technical Advancements
The new platform achieves an active-area half-pitch of just 11.95 nanometers in the memory array, utilizing advanced patterning techniques to shrink cell structures. This improvement allows more memory cells per chip and increases the number of dies produced from each silicon wafer. CXMT claims the fifth-generation platform delivers over 50% higher gross die output per wafer compared to its predecessor under comparable conditions, boosting manufacturing efficiency and lowering costs.
New LPDDR5X Memory Products
Alongside the platform, CXMT introduced two 24-gigabit LPDDR5X memory chips. These new products offer 50% more storage capacity than previous-generation offerings, providing Chinese electronics manufacturers with a domestic source of advanced mobile memory as demand for higher-capacity chips continues to grow.
Competing with Global Giants
The launch intensifies the memory-chip race, as CXMT aims to challenge dominant players like Samsung Electronics, SK Hynix, and Micron Technology. DRAM serves as short-term working memory in smartphones, computers, servers, and other electronic devices. The timing is crucial amid U.S. restrictions on advanced semiconductor technology and equipment, which have accelerated China’s efforts to develop indigenous alternatives.
CXMT’s progress reflects the broader national strategy to build a self-sufficient semiconductor ecosystem, with the new platform poised to support a wide range of applications from portable devices to data centers.




